inchange semiconductor isc product specification isc silicon npn power transistor MJE341 applications useful for medium voltage app lications requiring high f t such as converters and extended range amplifiers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 175 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 3 v i c collector current-continuous 0.5 a p c collector power dissipation t c =25 20 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 6.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJE341 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 1.0ma; i b = 0 b 150 v v ce (sat) collector-emitter saturation voltage i c =150ma ;i b =15ma 2.3 v v be (on) base-emitter on voltage i c =50ma ; v ce = 10v 1.0 v i cbo collector cutoff current v cb = 175v ; i e = 0 0.3 ma i ceo collector cutoff current v cb = 150v ; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 3v; i c = 0 0.1 ma h fe-1 dc current gain i c = 10m a ; v ce = 10v 20 h fe-2 dc current gain i c = 50m a ; v ce = 10v 25 200 h fe-3 dc current gain i c =150m a ; v ce = 10v 20 c ob output capacitance i e = 0, v cb =20v; f= 0.1mhz 15 pf f t current gain-bandwidth product i c =50ma ;v ce =25v; f test =1mhz 15 mhz isc website www.iscsemi.cn
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